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Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment | Semantic Scholar
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Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment | Semantic Scholar
Relationship between Eox andNst of (a) 10-nm-thick Al2O3, Y2O3, HfO2... | Download Scientific Diagram
LRS depends on CCs. LRS versus CCs for the Cu/GeOx/W cross-point... | Download Scientific Diagram
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Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment | Semantic Scholar
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Ge 3d XPS spectra of 1-nm-thick Al2O3, Y2O3, HfO2 and... | Download Scientific Diagram
Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices - Researcher | An App For
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Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment | Semantic Scholar
